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                ? 2003 IXYS All rights reserved Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 μs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, conditions and dimensions. Power Schottky Rectifier ISOPLUS220TM Electrically Isolated Back Surface Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance(<15pF) ? International standard package ? Very low VF ? Extremely low switching losses ? Low IRM-values ? Epoxy meets UL 94V-0 Applications ? Rectifiers in switch mode power supplies (SMPS) ? Free wheeling diode in low voltage C90Wconverters Advantages ? High reliability circuit operation ? Low voltage peaks for reduced protection circuits ? Low noise switching ? Low losses See DSS 20-01A data sheet for characteristic curves C A C A ISOPLUS 220TM Isolated back surface* Symbol Conditions Maximum Ratings IFRMS IFAV 35 A TC = 140 °C; rectangular, d = 0.5 20 A IFSM TVJ = 45°C; t p = 10 ms (50 Hz), sine 120 A EAS IAS = 8 A; L = 180 μH; T VJ = 25°C; non repetitive 7 mJ IAR VA =1.5 ? V RRM typical; f=10 kHz; repetitive 0.8 A (dv/dt)cr 5000 V/μs TVJ TVJM Tstg -55...+175 °C 175 °C -55...+150 °C TL 1.6 mm (0.063 in) from case for 10 s 260 °C Ptot TC = 25 ° VISOL 50/60Hz RMS; IISOL< 1 mA 2500 V~ FC Mounting force 11... 65 / 2.4 ...11 N/lb Weight typical 3 g IFAV VRRM = 100 V VF = 0.65 V = 20 A DSS 20-01AC VRSM VRRM Type V V 100 100 DSS 20-01AC Symbol Conditions Characteristic Values typ. max. IR TVJ = 25°C V R = VRRM TVJ = 125°C V R = VRRM 300 μA 2.5 mA VF IF = 10 A; T VJ = 125°C 0.65 V IF = 10 A; T VJ = 25°C 0.80 V IF = 20 A; T VJ = 125°C 0.76 V RthJC RthCH 1.7 K/W 0.6 K/W Note: See DSS 16-01A for electrical characteristic curves. DS98787(07/03) Preliminary Data Sheet |